英语翻译The EM488M3244LBA is Synchronous Dynamic Random Access M

英语翻译
The EM488M3244LBA is Synchronous Dynamic Random Access Memory ( SDRAM ) organized as 2Meg words x 4 banks x 32 bits.All inputs and outputs are synchronized with the positive edge of the clock .The 256Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 1.8V low power memory system.It also provides auto refresh with power saving / down mode.All inputs and outputs voltage levels are compatible with LVCMOS.
Available packages:TFBGA-90B(13mmx8mm)
Feature
Fully synchronous to positive clock edge
Single 1.8V±0.1V power supply
LVCMOS compatible with multiplexed address
Programmable Burst Length (B/L) - 1,2,4,8 or full page
Programmable CAS Latency (C/L) - 2 or 3
Data Mask (DQM) for Read / Write masking
Programmable wrap sequence - Sequential (B/L = 1/2/4/8/full page )
- Interleave (B/L = 1/2/4/8 )
Burst read with single-bit write operation
All inputs are sampled at the rissing edge of the system clock.
Auto refresh and self refresh.
4,096 refresh cycles / 64ms(15.625us)
Programmable Driver Strength Control
-1/2,1/4 of Full Strength
轩卿 1年前 已收到1个回答 举报

wndczq 幼苗

共回答了19个问题采纳率:84.2% 举报

该EM488M3244LBA是同步动态随机存取存储器(内存)组织2Meg字× 4银行× 32位.所有投入和产出是同步进行的积极边缘的时钟.在256 SDRAM的使用同步流水线架构,从而实现了高速的数据传输速率和目的是运行在1.8V的低功耗存储系统.它还提供自动刷新与节能/关闭模式.所有输入和输出电压等级符合LVCMOS .
可用的软件包:TFBGA -第九十B ( 13mmx8mm )
特征
完全同步,以积极的时钟边缘
单1.8V的± 0.1V的电源供应器
LVCMOS兼容多路处理
可编程突发长度(乙/ L )的-1 ,2,4,8或整页
可编程中国科学院潜伏期(丙/ L )的-第2或第3
数据面具(微分求积法)的读/写掩蔽
总结可编程序-序(乙/ L的= 1 /2/4/8/full页)
-交错(乙/ L的= 1 /2/4/8)
突发读取单比特写操作
所有投入都在抽样rissing边缘的系统时钟.
自动更新和自我更新.
4096刷新周期/ 64ms ( 15.625us )
可编程控制驱动力量
-1 / 2 ,1 / 4的全强度

1年前

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