英语翻译Research efforts aimed to elucidate how the electrophysi

英语翻译
Research efforts aimed to elucidate how the electrophysical characteristics of semiconductors are affected by gas adsorption were initiated in the 1940s.Significant advances achieved since then in semiconductor engineering also posed an inverse problem,namely,that of detecting gas impurities from the change of the electrophysical characteristics of the semiconductor.However,by contrast to semiconductor instruments that were promptly integrated into all spheres of science and technology,for semiconductor sensors it took an incomparably long time to cover the distance from laboratory prototypes to mass-produced gas analyzers.The progress in this sphere owes much to research activities supervised by I.A.Myasnikov from Karpov Institute of Physical Chemistry (NIFKHI).Those studies were focused on the elementary physicochemical processes occurring on the semiconductor metal oxide surface and on physicochemical applications of semiconductor sensors as high-sensitivity gauges (for summary of findings for most of those studies,see [1]).To this end,sensors with unique designs,manufactured in laboratories as one-of-a-kind instruments,were employed.This was paralleled by development (for the most part,abroad) of applied research activities on designing semiconductor sensors for determination of gas impurities in air and development of an appropriate mass production commercial technology [2–7].Those efforts culminated in manufacture of some types of sensors on the commercial scale.The principal manufacturers of metal oxide semiconductor sensors are City Technology (UK) and Figaro Inc.(Japan).
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